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Transition metal impurities can kill the efficiency of GaN-based LEDs

Transition metal impurities can kill the efficiency of GaN-based LEDs

Posted Dec 06, 2016

Using advanced first-principles calculations, University of California, Santa Barbara (UCSB) researchers have demonstrated the mechanism by which transition metal impurities – iron in particular – can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such...

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