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Tantalum Pentoxide Sputtering Target Ta2O5

Tantalum Pentoxide Sputtering Target Ta2O5

  • $ 12800


  • Purity: 99.99%
  • Shape: Discs,Plate,Step(Dia ≤350mm,Thickness ≥1mm) Rectangle, Sheet, Step (Length ≤1100mm, Width ≤300mm, Thickness≥1mm)
  • Application:Anti-reflection coatings, interference filters,  UV laser applications with silicon dioxide (n = 1.48), 
  • Hard,scratch-resistant and adherent coatings, dielectrics in film capacitors, as gate insulators in large scale integrated circuits requiring low leakage voltage characteristics. 

Tantalum Pentoxide Evaporation Material  

  • Density: 8.7 g/cm3   
  • Purity: 99.99%, Dark grey /white tablets or granules
  • Melting point: 1880 ℃, Vacuum pressure at 2000℃ 1 Pa, at 2200℃ 10 Pa
  • Properties of thin film:
  1.          Transmission range 400 ~ 8000 nm
  2.          Refractive index at 550nm 2.10
  • Hints on evaporation:
  1.          Electron-beam gun.
  2.          Evaporation temperature  2000 ℃
  3.          Oxygen partial pressure  2-5 x 10-5 Torr  
  4.          Substrate temperature   175  - 300 ℃
  5.          Evaporation Rate   2-5 Å/sec
  • Source Container  tantalum or graphite liner          
  • Shape: Irregular pieces, pellet, 8-9 mm dia. x 4-5 mm thick sintered tablets,3-12 mm sintered pieces
  • Dimension: 3-8mm   irregular pieces
  • Application: Anti-reflection coatings, interference filters,  UV laser applications with silicon dioxide (n = 1.48), 
  • Hard, scratch-resistant and adherent coatings, dielectrics in film capacitors, as gate insulators in large scale integrated circuits requiring low leakage voltage characteristics.

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