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Laser Diode Grade 2 inch Undoped N-type Gallium Nitride Single Crystal C plane (0001), MSE Supplies

MSE PRO Laser Diode Grade 2 inch Undoped N-type Gallium Nitride Single Crystal C plane (0001)

  • $ 3,69595
  • Save $ 44400

Bulk orders? Please contact us for Bulk Quotation.

Qty (Each) Price (Each)
1 - 1 $ 3,695.95
2 - 10 $ 3,595.95
11 - 11+ $ 3,495.95
Free-standing (single crystal) GaN substrate, C plane (0001), size 2" diameter
Conductivity type: N-type (undoped)
  • Dimension: 2" diameter
  • Thickness: 350 +/- 25 um
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
  • Total Thickness Variation: <15 um
  • Bow: < 20 um
  • Resistivity (300K): < 0.5 Ohm.cm
  • Carrier Concentration: 1e17cm-3
  • Mobility: 500 cm2/(V*s)
  • Dislocation Density: < 9 x 105 cm-2
  • Polishing: Front surface: Ra < 0.5 nm, epi-ready polished. back surface fine ground.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf