MSE PRO Laser Diode Grade 2 inch Undoped N-type Gallium Nitride Single Crystal C plane (0001)

• Dimension: 2" diameter
• Thickness: 350 +/- 25 um
• Usable area: >90%
• Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
• Total Thickness Variation: <15 um
• Bow: < 20 um
• Resistivity (300K): < 0.5 Ohm.cm
• Carrier Concentration: 1e17cm^-3
• Mobility: 500 cm²/(V*s)
• Dislocation Density: < 9 x 10⁵ cm^-2
• Polishing: Front surface: Ra < 0.5 nm, epi-ready polished. back surface fine ground.
• Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf