MSE PRO Boron-doped Single Crystal Diamond Plate (Ra < 2nm)
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MSE PRO™ Boron-doped Single Crystal Diamond Plate (Ra < 2nm)
Boron-doped diamond is a new type of p-type semiconductor material with the advantages of stability, breakdown field strength and hole mobility. It has broad application prospects, especially suitability for power semiconductor devices and electrochemical applications.
MSE Supplies can offer Single crystal diamonds doped from low to high B-concentrations. The lightly B-doped diamond exhibits good mobility, suitable for semiconductor devices. Heavily B-doped diamond demonstrates low resistivity and can be used as an electrode for ohmic contacts.
Specification:
| Lightly Doped Diamond | Heavily Doped Diamond | |
| Size (mm2) | 3x3~10x10 | 3x3~10x10 |
| [B] Concentration (cm-3) | 1015~1017 | 1018~1020 |
| Doped Layer Thickness (um) | ≤300 | ≤50 |
| Hole Mobility (cm2·V-1·s-1) | 10~1000 | 1~10 |
| Resistivity (ohms.cm) | 103~106 | 10-2~102 |
| Roughness Ra (nm) | ≤2 | ≤2 |
Please contact us for customization or bulk order.