MSE PRO 4 inch Tungsten Thin Film on Silicon/ SiO2 Wafer
MSE PRO™ 4 inch Tungsten Thin Film on Silicon/SiO2 Wafer
Tungsten (W) thin film on silicon wafer refers to a layer of tungsten material that is deposited onto the surface of a silicon wafer. This process is typically carried out using techniques such as physical vapor deposition (PVD) or chemical vapor deposition (CVD). Tungsten thin film on silicon wafer can be used as barrier layer (preventing the migration of atoms into neighboring layers), etch stop layer (acts as a barrier to protect the underlying layers from etching), etc. With the deposition of tungsten, it provides enhanced electrical conductivity, barrier properties, adhesion, and etch stop functionality. It is widely used for microelectronics and semiconductor manufacturing.
Specification:
| Structure |
W/Si or W/Oxide/Si |
| SKU# | W/Si: WA5301 ; W/Oxide/Si: WA5302 |
| Size | 4 inch |
| Substrate | Silicon wafer |
| Substrate Thickness | 525 um |
| Substrate Orientation | <100> |
| Substrate Surface |
Double side polished |
| Oxide Thickness | none (WA5301) ; 50 um (WA5302) |
| Thin Film Material | Tungsten |
| Thin Film Thickness | 100 nm |
| Thin Film Thickness Tolerance | ± 5 % |