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4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates - MSE Supplies LLC

High Resistivity Silicon Carbide Wafers 4H-SiC Semi-Insulating SiC Substrates

SKU: WA0398

  • $ 1,53595
  • Save $ 16905

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High Resistivity Silicon Carbide (SiC) Crystal Substrate, SiC Wafers Specifications

For bulk orders of more than 10 pieces, please contact us for special pricing.

Grade

 Zero MPD Grade

Diameter

100.0 mm +/- 0.5 mm (4inch) or

149.5 mm~150.0 mm (6inch)

Thickness

500 um +/- 25 um

Wafer Orientation

On axis: <0001> +/- 0.5 deg

Micropipe Density (MPD)

 1 cm-2

Electrical Resistivity

(Ohm-cm)

 >1E10

Doping

V-doped
Primary Flat {10-10} +/- 5.0 deg

Primary Flat Length

32.5 mm +/- 2.0 mm (4inch) or

Notch (6inch)

Secondary Flat Length

18.0 mm +/- 2.0 mm (4inch)

Secondary Flat Orientation

Silicon face up: 90 deg CW from Primary flat +/- 5.0 deg

Edge exclusion

3 mm

LTV/TTV /Bow /Warp

2.5um /5um /15um /30um 

Surface Roughness

Optical Polish Ra < 1 nm on the C face

CMP Ra < 0.2 nm on the Si face

Cracks inspected by high intensity light

 None

Hex Plates inspected by high intensity light*

 Cumulative area 0.05 %

Polytype Areas inspected by high intensity light*

 None

Scratches inspected by high intensity light**

 None

Edge chipping

 None permitted >0.2mm width and depth

Surface Contamination as inspected by high intensity light

None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up. 

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

4-5 x10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

 

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x 106

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

Product Grades

A Grade Zero micropipe density (MPD 1 cm-2)

B Grade Production grade (MPD 5 cm-2)

C Grade Research grade (MPD 15 cm-2)

D Grade Dummy grade (MPD 30 cm-2)

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.