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GaAs, Gallium Arsenide, Crystal Substrates - MSE Supplies

GaAs, Gallium Arsenide, Crystal Substrates

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Main Parameters
single crystal
Dopant
conduction type
concentration of flows cm-3
Density
cm-2
Growth method
Max size
Substrate
GaAs
None
Si
/
<5×105
LEC
HB
Dia3″
Dia3″×0.5
Dia2″×0.5
Si
N
>5×10^17
Cr
Si
/
Fe
N
~2×10^18
Zn
P
>5×10^17
Size(mm)
25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
Special size and orientation are available upon request
Surface rough
Surface roughness(Ra):<=5A
Polishing
Single or double
Pack
100 clean bag,1000 exactly clean bag

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