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GaAs Gallium Arsenide Crystal Substrates,  MSE Supplies

GaAs Gallium Arsenide Crystal Substrates

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Main Parameters for GaAs Gallium Arsenide Crystal Substrates

single crystal
Dopant
Conduction type
Carrier concentration  cm-3
Growth method
Max size
GaAs
None
SI
/
LEC
HB
Dia. 3″
Si
N
>5×10^17
Cr
SI
/
Fe
N
~2×10^18
Zn
P
>5×10^17
Sizes (mm)
25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, 2 inch diameter
Special size and orientation options are available upon request
Surface Roughness
Surface roughness(Ra): <= 5A
Polishing
Single or double side polished

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