Menu
Cart
6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating,  MSE Supplies LLC

6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating

To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.

6 inch diameter Silicon Carbide (SiC) Wafers Specifications

Both N-Type and Semi-Insulating Type 4H 6 inch SiC wafers are available. Please contact us for the current lead time.

Download the PDF file here.

Grade

Zero MPD Grade

Production Grade

Research Grade

Dummy Grade

Diameter

150.0 mm +/- 0.2 mm

Thickness

500 um +/- 25 um for 4H-SI

350 um +/- 25 um for 4H-N

Wafer Orientation

On axis: <0001> +/- 0.5 deg for 4H-SI

Off axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N

Micropipe Density (MPD)

1 cm-2

5 cm-2

15 cm-2

30 cm-2

Electrical Resistivity

(Ohm-cm)

4H-N

0.015~0.025

4H-SI

>1E5 

(90%) >1E5 

Primary Flat (N type)

{10-10} +/- 5.0 deg

Primary Flat Length (N type)

47.5 mm +/- 2.0 mm

Notch (Semi-Insulating type) Notch

Edge exclusion

3 mm

TTV /Bow /Warp

15um /40um /60um

Surface Roughness

Polish Ra 1 nm

CMP Ra 0.5 nm on the Si face

Cracks by high intensity light

None

None

1 allowed, 2 mm

Cumulative length 10 mm, single length 2 mm

Hex Plates by high intensity light*

Cumulative area 0.05 %

Cumulative area 0.05 %

Cumulative area 0.05 %

Cumulative area 0.1 %

Polytype Areas by high intensity light*

None

None

Cumulative area 2%

Cumulative area 5%

Scratches by high intensity light**

3 scratches to 1 x wafer diameter cumulative length

3 scratches to 1 x wafer diameter cumulative length

5 scratches to 1 x wafer diameter cumulative length

5 scratches to 1 x wafer diameter cumulative length

Edge chip

None

3 allowed, 0.5 mm each

5 allowed, 1 mm each

Contamination by high intensity light

None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

PROPERTIES OF 4H SILICON CARBIDE CRYSTAL MATERIAL

Property

4H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

Stacking Sequence

ABCB

Density

3.21

Mohs Hardness

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

Dielectric Constant

c ~ 9.66

Doping Type

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

Band-gap (eV)

3.23

Break-Down Electrical Field (V/cm)

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2, 3, 4, 6 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

Product Grades

A Grade Zero micropipe density (MPD < 1 cm-2)

B Grade Production grade (MPD < 5 cm-2)

C Grade Research grade (MPD < 15 cm-2)

D Grade Dummy grade (MPD < 30 cm-2)

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications.


We Also Recommend
10 mm x 10 mm 4H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate,  MSE Supplies LLC

10 mm x 10 mm 4H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 8500
10 mm x 10 mm 4H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate,  MSE Supplies LLC

10 mm x 10 mm 4H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 12500
10 mm x 10 mm 6H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate,  MSE Supplies LLC

10 mm x 10 mm 6H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 9900
10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate,  MSE Supplies LLC

10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 13900
2 in Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates,  MSE Supplies LLC

2 in Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates