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Thermal oxide (silicon dioxide, SiO2) layer is formed on silicon wafer surface at an elevated temperature in the presence of an oxidant. This process is commonly referred to as a thermal oxidation process. The SiO2 thermal oxide thin film is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C.
Silicon/silicon dioxide (Si/SiO2) thermal oxide wafers and substrates are widely used for FET substrates, surface microscopy analysis, ellipsometry measurements and X-ray studies. MSE Supplies also offers monolayer graphene film on Si/SiO2 substrate. (10mm x 10mm, 1 inch x 1 inch, and more...)
We can offer a variety of choices for customization. Please contact us for your requirements of customized products.