2 in Silicon Carbide Wafers 4H N-type/P-type SiC Substrates

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SKU: WA0309
Regular price $ 655.95

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MSE PRO 2 in Silicon Carbide Wafers 4H N-type/P-type SiC Substrates

Introduction

2-inch N-type/P-type silicon carbide (SiC) wafers are high-purity SiC substrates designed for semiconductor research, power electronics, and high-temperature device applications. Their N-type/P-type conductivity provide excellent electrical, thermal, and chemical stability, making them suitable for epitaxial growth, device fabrication, and laboratory research.

Specifications

Specification Dummy Grade
Diameter 50.8 mm ± 0.38 mm
Thickness 330 μm ± 25 μm
Wafer Orientation Off axis: 4.0° toward <1120> ± 0.5° for 4H-N
Micropipe Density ≤ 50 cm⁻²
Resistivity – 4H-N 0.015–0.028 Ω·cm
Resistivity – 6H-N 0.02–0.1 Ω·cm
Resistivity – 4/6H-SI (90%) > 1E5 Ω·cm
Primary Flat {10-10} ± 5.0°
Primary Flat Length 15.9 mm ± 1.7 mm
Secondary Flat Length 8.0 mm ± 1.7 mm
Secondary Flat Orientation Silicon face up: 90° CW from Prime flat ± 5.0°
Edge Exclusion 1 mm
TTV / Bow / Warp ≤ 15 μm / ≤ 25 μm / ≤ 25 μm
Roughness – Polish Ra ≤ 1 nm
Roughness – CMP Ra ≤ 0.5 nm
Cracks by High Intensity Light 1 allowed, ≤ 1 mm
Hex Plates by High Intensity Light Cumulative area ≤ 3%
Polytype Areas by High Intensity Light Cumulative area ≤ 5%
Scratches by High Intensity Light 8 scratches to 1 × wafer diameter cumulative length
Edge Chip 5 allowed, ≤ 1 mm each
Contamination by High Intensity Light None


* Please contact us if you need more detailed specification.

**For production grade, please contact us for availability.

***Some color variations may be visible during the production and will not affect its physical and electronic properties. 

Wafer and Substrate Sizes

Wafers: 2, 4, 6 inch; smaller substrates: 5x5, 10x10mm, other sizes are available and can be custom-made upon request

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.