Silicon Carbide Sputtering Target SiC, MSE Supplies

MSE PRO Silicon Carbide Sputtering Target SiC

£376⁰⁰

Specifications

To add a Cu Backing Plate with Indium Bonding for Sputtering Targets

If you need customized polycrystalline silicon carbide (SiC) sintered parts, please contact MSE Supplies for a quote (sales@msesupplies.com). We can make precision SiC ceramic parts with drawings provided by our customers.

Material Type	Silicon Carbide
Symbol	SiC
Melting Point (°C)	~2,700
Theoretical Density (g/cc)	3.22
Z Ratio	**1.00
Sputter	RF
Max Power Density (Watts/Square Inch)	30
Type of Bond	Indium, Elastomer
Comments	Sputtering preferred.
Purity	99.5%

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