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Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001), MSE Supplies

MSE PRO Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001)

  • £3,65400
  • Save £43900

Bulk orders? Please contact us for Bulk Quotation.

Qty (Each) Price (Each)
1 - 1 $ 4,495.95
2 - 10 $ 4,395.95
11 - 11+ $ 4,195.95
Free-standing GaN substrate, C plane (0001), semi-insulating, size 2 inch Diameter
Conductivity type: semi-insulating, Single side polish
Doping: Fe-doped (iron doping)
Please contact us for discounted rates when you order a larger quantity.
  • Dimension: 2 inch, or 50.8 mm
  • Thickness: 350 +/- 25 um
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg+/- 0.15 deg
  • Total Thickness Variation: <15 um
  • Bow: <20 um
  • Resistivity (300K): > 10^6 Ohm-cm
  • Fe-doping concentration: ~ 3 × 1018 cm−3
  • Dislocation Density: < 9 x 105 cm-2
  • Polishing: Front surface: Ra <0.5 nm, epi-ready, double side polished available per request
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free-standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES