MSE PRO Diamond Resistor
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By Sputtering TaN onto CVD diamond substrates, small RF resistors, attenuators and matchers can be fabricated. The high thermal conductivity of diamond enables high power handling. A typical CVD diamond resistor reduces the occupied area by 8 times under the small heat dissipation.
In addition, due to the relationship between capacitance levels and high power/high frequency performance, components made using this material not only exhibit high power processing capabilities at higher frequencies per square millimeter, but also exhibit lower parasitic performance, which is better isolation.
Capability:
| SKU# | WA1811 | WA1812 | WA1813 | WA1814 | WA1815 | WA1816 | WA1817 | |
| Rated Power (W) | 10 | 50 | 50 | 100 | 150 | 300 | 500 | |
| Frequency Range (GHz) | DC-12 | DC-20 | DC-28 | DC-18 | DC-14 | DC-6 | DC-5 | |
| VSWR | ≤1.6 | |||||||
| T.C.R (x106/K) | ±300 | |||||||
| Nominal Impedance (Ω) | 50 | |||||||
| Resistance Tolerance | J: ±5% K: ±10% |
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| Operating Temperature (°C) | -55 to +150 | |||||||
| External Dimensions (mm) | A | 1.14±0.10 | 1.40±0.10 | 1.65±0.10 | 2.16±0.10 | 3.30±0.10 | 5.21±0.10 | 5.60±0.10 |
| B | 0.64±0.10 | 1.40±0.10 | 0.89±0.10 | 1.40±0.10 | 2.54±0.10 | 2.67±0.10 | 4.20±0.10 | |
| C | 0.38±0.07 | |||||||
