MSE PRO 4 inch Titanium Tungsten (TiW) Thin Film on Silicon Wafer

£220⁰⁰
Save £26⁰⁰

MSE PRO™ 4 inch Titanium Tungsten (TiW) Thin Film on Silicon Wafer

The addition of titanium to tungsten improves its corrosion resistance and adhesive strength for interconnect metal bonds, making it an attractive material for electronic applications. Additionally, titanium enhances the diffusion barrier performance due to its high affinity for nitrogen and oxygen, and the thermal and electrical conductivity of TiW alloys is also impressive.

Specifications:

Size	4 inch
Substrate	Silicon wafer
Substrate Thickness	775 um +/- 25um
Substrate Doping Type	P-type/ Boron-doped
Substrate Orientation	<100>
Substrate Resistivity	1-100 ohm-cm
Deposition Method	PVD
Substrate Surface	Single Side Polished
Thin Film Material	Titanium Tungsten (TiW)
Thin Film Thickness	50 nm - 300nm customizable

Reference:

[1] A. Roshangias, R. Pelzer, G. Khatibi and J. Steinbrenner, "Thickness dependency of adhesion properties of TiW thin films," 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC), Singapore, 2014, pp. 192-195.

[2] F. Saghaeian, J. Keckes, S. Woehlert, M. Rosenthal, M. Reisinger, J. Todt,
Microstructure and stress gradients in TiW thin films characterized by 40 nm X-ray diffraction and transmission electron microscopy, Thin Solid Films, Volume 691, 2019, 137576.