Specification:
| General Wafer | |
| Structure | LiTaO3 / Oxide / Si |
| Diameter | Φ100 ± 0.2 mm |
| Thickness | 525 ± 20 μm |
| Primary Flat Length | 32.5 ± 2 mm |
| Wafer Beveling | R Type |
| TTV | < 10 μm |
| LTV | < 1.5 μm (5∗5 mm2) / 95% |
| Bow | ± 50 μm |
| Warp | < 50 μm |
| Edge Exclusion | 5 mm |
| Edge Trimming | 2 ± 0.5 mm |
| Lithium Tantalate Layer | |
| Average Thickness | 600 ± 20 nm |
| Orientation | X axis ± 0.3° |
| Primary Flat | Perpendicular to +Z Axis ± 1° |
| Front Surface Roughness (Ra) | < 0.5 nm |
| Defects |
Within 150 total |
| Isolation SiO2 Layer | |
| Thickness | 4700 ± 100 nm |
| Uniformity | <100nm @17 points |
| Substrate | |
| Material | Si |
| Resistivity | > 10 kΩ·cm |
| Orientation | <100> ± 1° |
| Primary Flat Orientation | <110> ± 1° |
| Backside | Etched |