MSE PRO 2 inch Gallium Nitride (400 nm) Template UID (n-) on p-type Si <111>, Production Grade
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$ 526.95
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MSE PRO 2 inch Gallium Nitride (400 nm) Template UID (n-) on p-type Si <111>, Production Grade
Features
Gallium Nitride (GaN) templates are grown by halide vapor phase epitaxy (HVPE) technologyand provide a high purity, carbon-free buffer layer for subsequent device epitaxy, fabrication process development, or basic research.
Templates are grown on (111) silicon substrates and utilize a PVDNC AlN buffer layer.
Technical Specifications
Size: 2" diameter
GaN Thickness: 400nm
Front surface: As Grown
Substrate: Silicon, <111>, p-type, SSP
Production Grade
Atomic Force Microscopy (AFM) Images
Please contact us for customization.