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10x10 mm AlGaN/GaN HEMT on Si Wafer (GaN/Si) - MSE Supplies LLC

MSE PRO 10x10 mm AlGaN/GaN HEMT on Si Wafer (GaN/Si)

  • £15800

10x10 mm AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate

HEMT structure for 650 V power electronics applications

Special layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.

  • Product SKU#: WA0249
  • Thickness of GaN cap layer: 3 nm
  • AlGaN composition: 26% Al, 74% GaN
  • AlGaN barrier layer thickness: 25 nm
  • AlN inter-layer thickness: 1 nm
  • Thickness of GaN layer: 2 um
  • Thickness of buffer layer: ~ 1 um
  • Thickness of Si (111) substrate: 1000 um 
  • Sheet resistance (Ohms per square): < 420
  • Electron mobility: > 1300 cm2/V-sec for Si substrate
  • Sheet carrier concentration (/cm): ~ 1E13
  • Breakdown voltage: > 1000 V
  • Bow: < 60 um
  • RMS roughness (AFM): < 0.5 nm (5 um x 5 um area)
  • 2 um GaN layer Resistivity: > 1E5 Ohm.cm

    Related Publications

    1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green; K.K. Chu; E.M. Chumbes; J.A. Smart; J.R. Shealy; L.F. Eastman
    2. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Huili Xing; Y. Dora; A. Chini; S. Heikman; S. Keller; U.K. Mishra
    3. High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang; S. Keller; G. Parish; S. Heikman; S.P. DenBaars; U.K. Mishra
    4. CW operation of short-channel GAN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz M. Asif Khan; Q. Chen; M.S. Shur; B.T. Dermott; J.A. Higgins; J. Burm; W.J. Schaff; L.F. Eastman
    5. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D. Ducatteau; A. Minko; V. Hoel; E. Morvan; E. Delos; B. Grimbert; H. Lahreche; P. Bove; C. Gaquiere; J.C. De Jaeger; S. Delage
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