List of Thermal Conductivity Values for Natural and Engineered Materials
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| Materials | Thermal Conductivity* |
|---|---|
|
W*m-1*K-1 |
|
| ABS (Acrylonitrile butadiene styrene) thermoplastic | 0.25 |
| Acrylic | 0.2 |
| Alumina (aluminium oxide, Al2O3) (Sputtering Target)(powders)(Milling media) (Sapphire/Single Crystal)(Planetary Milling Jars)(Roller Milling Jars)(High Purity Powders) | 12 |
| Aluminum (Sputtering Target) | 205 |
| Aluminum Alloy AlSi7Mg (Additive Manufacturing/3D Printing Powder) | 160 - 170 |
| Aluminum Alloy AlSi10Mg (Additive Manufacturing/3D Printing Powder) | 119 |
| Aluminum Alloy AlSi12 (Additive Manufacturing/3D Printing Powder) | 121 |
| Aluminum Metaphosphate, Al(PO3)3 (High Purity Powder) | |
| Aluminum nitride (Sputtering Target)(AlN template on Sapphire) | 285 |
| Antimony (Sputtering Target) | 24 |
| Arsenic | 50 |
| Bakelite, bleached | 0.2 |
| Barium | 18 |
| Barium Fluoride, BaF2 (High Purity Powder)(Single crystal and Substrates)(Sputtering Targets) | 12.1 |
| Barium ferrite, | |
| Barium Titanate, BaTiO3 (Sputtering Target) (Single Crystal Substrate) | 6 |
| Benzocyclobutene | 0.3 |
| Beryllium |
200 |
| Bismuth (Sputtering Target) | 10 |
| Bismuth Germanate, Bi4Ge3O12 (Scintillation Crystals) | 3.29 |
| Bismuth Oxide, Bi2O3 (High Purity Powder)(Sputtering Target) | 1.3 - 2.2 |
| Boron Carbide,B4C (Sputtering Target) | 17 - 42 |
| Boron Nitride, BN (Sputtering Target) | 751 |
| Brass | 109 |
| Brick masonry | 0.4 - 0.7 |
| Bronze | 26 |
| Cadmium (Sputtering Target) | 92 |
| Cadmium Difluoride, CdF2 (Sputtering Target) | |
| Cadmium Selenide, CdSe (Sputtering Target) | 0.04 |
| Cadmium Sulfide, CdS (Sputtering Target) | 40.1 |
| Cadmium Telluride, CdTe (Sputtering Target) | 0.083 |
| Calcium | 200 |
| Calcium Fluoride, CaF2 (Single Crystal)(Sputtering Target)(Eu doped Scintillation Crystal) | 9.71 |
| Calcium Fluoride Europium doped, Eu:CaF2 (Eu doped Scintillation Crystal) | 9.7 |
| Cast Iron Gray | 52 |
| Cellulose acetate (CA) | 0.17 - 0.34 |
| Cellulose acetate butynate (CAB) | 0.16 - 0.32 |
| Cellulose nitrate (CN) | 0.12 - 0.21 |
| Cement | 1.73 |
| Cesium Iodide, CsI (Scintillation Crystals) | 1.1 |
| Cerium (Sputtering Target) | 11 |
| Cerium Dioxide, CeO2 (Sputtering Target) | 14.2 |
| Cerium Fluoride, CeF3 (Scintillation Crystal) (Sputtering Target) | 1.57 |
| Cerium Oxide, Ce2O3 (High Purity Powder) | 12 |
| Chlorinated polyether | 0.13 |
| Chlorinated polyvinylchloride (CPVC) | 0.136 |
| Chromium (Sputtering Target) | 93.9 |
| Chromium Boride, Cr5B3 (Sputtering Target) | |
| Chromium Carbide, Cr3C2 (Sputtering Target) | 189.77 |
| Chromium Diboride CrB2 (Sputtering Target) | 20.48 - 31.77 |
| Chromium Dioxide, CrO2 | 236.2 |
| Chromium Diselenide, CrSe2 | 35.3 |
| Chromium Disilicide, CrSi2 (Sputtering Target) | 10 |
| Chromium Disulfide, CrS2 | 88.8 |
| Chromium Ditelluride, CrTe2 | 27.9 |
| Chromium Monoboride, CrB | 20.1 |
| Chromium Nitride, CrN | 3.5 |
| Chromium Nitride, Cr2N | 12 |
| Chromium Oxide, Cr2O3 (High Purity Powder)(Sputtering Target) | 5.17 |
| Clay tile structure | 0.6 - 2.5 |
| Cobalt (Sputtering Target) | 100 |
| Cobalt Chrome Molybdenum alloy, CoCrMo (Additive Manufacturing/3D Printing Powder) | 13 |
| Cobalt Chrome Tungsten alloy, CoCrW (Additive Manufacturing/3D Printing Powder) | 9.4 |
| Cobalt Disilicide, CoSi2 | |
| Concrete | 0.1 - 0.3 |
| Concrete structure | 1.0 - 1.8 |
| Constantan | 23.3 |
| Copper (Sputtering Target) | 385 |
| Copper, Beryllium 25 | 105 - 130 |
| Copper Tin alloy, CuSn10 (Additive Manufacturing/3D Printing Powder) | 59 |
| Cupronickel 30% | 30 |
| Diamond (Carbon) | 2200 |
| Duralumin | 225 |
| Dysprosium (Sputtering Target) | 11 |
| Dysprosium Oxide, Dy2O3 (High Purity Powder)(Sputtering Targets) | 29.5 |
| Ebonite | 0.17 |
| Epoxy, cast resins & compounds, unfilled | 0.35 |
| Erbium (Sputtering Target) | 15 |
| Erbium Oxide, Er2O3 (High Purity Powder)(Sputtering Targets) | 6.5 |
| Ethylene ethyl acrylate (EEA) | 0.42 |
| Ethylene vinyl acetate (EVA) | 0.21 |
| Europium (Sputtering Target) | 14 |
| Europium Oxide, Eu2O3 (High Purity Powder) | 14 |
|
Fluorspar, CaF2 (Single Crystal) (Sputtering Target) |
9.71 |
| Gadolinium (Sputtering Target) | 10.5 |
| Gadolinium Gallium Garnet (GGG), Gd3Ga5O12 (Single Crystal)(Nd doped Single Crystal) | 7.4 |
| Gadolinium Oxide, Gd2O3 (High Purity Powder) | 6.2 |
| Gadolinium Tetraboride, GdB4 | 148.5 |
| Gallium | 40.6 |
| Gallium Arsenide, GaAs (Sputtering Target) (Single Crystal Substrates) | 0.55 |
| Gallium Oxide, Ga2O3 (Single Crystal Wafer)(High Purity Powder)(Sputtering Target) | 17 |
| Gallium Nitride, GaN (Single Crystal) | 253 |
| Germanium (Sputtering Target)(Single Crystal) | 0.58 |
| Germanium Oxide, GeO2 (High Purity Powder) | 60.2 |
| Germanium Telluride, GeTe (Sputtering Target) | 8.6 |
| Glass, Pyrex | 1.0 |
| Gold (Sputtering Target) | 310 |
| Granite | 3.1 |
| Graphite, pure (Carbon) (Sputtering Target) (Anode Materials) | 168 |
| Hafnium (Sputtering Target) | 22 |
| Hafnium Carbide, HfC (Sputtering Target) | 4.18 |
| Hafnium Dioxide, HfO2 (Sputtering Target) | 1.1 |
| Hafnium Disilicide, HfSi2 (Sputtering Target) | 104 |
| Hafnium Nitride, HfN (Sputtering Target) | 22 |
| Hard alloy K20 | 83 |
| Hastelloy C22 (Sputtering Target) | 10.1 |
| Hastelloy C276 (Sputtering Target) | 10.2 |
| Hastelloy N (Sputtering Target) | 11.5 |
| Holmium (Sputtering Target) | 16 |
| Holmium Oxide, Ho2O3 (High Purity Powder)(Sputtering Targets) | |
| Ice, 0oC water | 2.18 |
| Inconel 625 (Additive Manufacturing/3D Printing Powder) | 9.8 |
| Inconel 718 (Additive Manufacturing/3D Printing Powder) | 11.4 |
| Indium (Sputtering Target) | 81.8 |
| Indium Antimonide, InSb (Sputtering Target) | 18 |
|
Indium Arsinide, InAs (Single Crystal)(Sputtering Target) |
27 |
| Indium Gallium Zinc Oxide (IGZO), In2Ga2ZnO7 (Sputtering Target) | 1.4 |
| Indium Oxide, In2O3 (High Purity Powder)(Sputtering Target) | |
| Indium Phosphide, InP (Single Crystal) | 68 |
| Indium Sulfide, In2S3 (Sputtering Target) |
4 |
| Indium Tin Oxide (ITO), In2-xSnxO3 (Sputtering Target)(ITO coated glass and film) | 10 |
| Iridium (Sputtering Target) | 147 |
| Iron, pure (Sputtering Target) | 80 |
| Iron, cast | 52 |
| Iron Boride, FeB (Sputtering Target) | |
| (Di)Iron Boride Fe2B (Sputtering Target) | |
| (Tri)Iron Carbide, Fe3C (Sputtering Target) | |
| Langasite (LGSO), La3Ga5SiO14 (Single Crystal) | |
| Langatate (LGT), La3Gao5.5Ta0.5O14 (Single Crystal) | |
| Lanthanum (Sputtering Target) | 13.4 |
| Lanthanum Aluminate, LaAlO3 (Single Crystal)(Sputtering Target) | 10 @ 100°C |
| Lanthanum Fluoride, LaF3 (Sputtering Target) | 5.1 |
| Lanthanum Hexaboride, LaB6 (Sputtering Target) | 43.5 |
| Lanthanum Manganate, LaMnO3 (Sputtering Target) | 1.29 |
| Lanthanum Oxide, La2O3 (High Purity Powder) | 6 |
| Lanthanum-Strontium Aluminium Tantalate (LSAT), (La0.18Sr0.82)(Al0.59Ta0.41)O3 (Single Crystal) | 5.1 |
| Lead (Sputtering Target) | 34.7 |
| Lead Fluoride, PbF2 (Single Crystal)(Sputtering Target) | 1.4 |
| Lead Selenide, PbSe (Sputtering Target) | 1.62 |
| Lead Sulfide, PbS (Sputtering Target) | 2.5 |
| Lead Telluride, PbTe (Sputtering Target) | 2 |
| Lead Tungstate, PbWO4 (Single Crystal) | 2.2 |
| Limestone | 1.3 |
| Lithium (Chips for Batteries) | 85 |
| Lithium Aluminate, LiALO2 (Single Crystal) | 9.14 |
| Lithium Fluoride, LiF (Sputtering Target)(High Purity Powder)(Single Crystal) | 11.3 |
| Lithium Niobate, LiNbO3 (Single Crystal) (Sputtering Target) | 5.6 |
| Lithium Tantalate, LiTaO3 (Single Crystal) | 46 |
| Lutetium (Sputtering Target) | 16.2 |
| Lutetium Aluminum Garnet (LuAG),Y3Al5O12 | 8.3 |
| Lutetium Oxide, Lu2O3 (High Purity Powder) | 12.5 |
| Macor | 1.6 |
| Magnalium | 125 |
| Magnesium (Sputtering Target) | 156 |
| Magnesium Aluminate, MgAl2O4 (Single Crystal) | 19 |
| Magnesium Fluoride,MgF2 (Sputtering Target)(Single Crystal)(High Purity Powder) (Single Crystal Substrates) | 11.6 |
|
Magnesium Oxide, MgO (Sputtering Target)(Crucible)(Single Crystal Substrate)(High Purity Powder) |
60 |
| Manganese (Sputtering Target) | 7.81 |
| Marble | 2.08 - 2.94 |
| Mercury | 8.3 |
| Mica | 0.71 |
| Molybdenum (Sputtering Target) | 138 |
| Molybdenum Boride, Mo2B (Sputtering Target) | 146 |
| Molybdenum Carbide, Mo2C (Sputtering Target) | 48.4 |
| Molybdenum Dioxide, MoO2 | 209.6 |
| Molybdenum Diselenide, MoSe2 | 46.2 |
| Molybdenum Disilicide, MoSi2 (Sputtering Target) | 65 |
| Molybdenum Disulfide, MoS2 | 82.2 |
| Molybdenum Ditelluride, MoTe2 | 41.1 |
| Molybdenum Trioxide, MoO3 (Sputtering Target) | 6 |
| Monel metal | 26 |
| Neodymium (Sputtering Target) | 17 |
| Neodymium Copper Oxide, Nd2CuO4 (Sputtering Target) | |
| Neodymium Fluoride, NdF3 (Sputtering Target) | |
| Neodymium Hexaboride, NdB6 (Sputtering Target) | 47.3 |
| Neodymium Oxide, Nd2O3 (High Purity Powder) | |
| Nickel (Sputtering Target) | 60.7 |
| Nickel Chromium (Nichrome), NiCr (Sputtering Target) | 11.3 |
| Nickel Oxide, NiO (Sputtering Target) | 50 |
| Niobium (Sputtering Target) | 54 |
| Niobium Carbide, NbC (Sputtering Target) | 15 |
| Niobium Disilicide, NbSi2 | 41.8 |
| Niobium Nitride, NbN (Sputtering Target) | 4.2 |
| Niobium Oxide, Nb2O5 (Sputtering Target) (High Purity Powder) | 1 |
| Niobium Selenide, NbSe2 (Sputtering Target) | 90 @20K |
| Niobium Silicide, Nb5Si3 (Sputtering Target) | |
| Nylon, general purpose | 0.25 |
| Nylon, Type 11, molding and extruding compound | 0.30 |
| Nylon, Type 12, molding and extruding compound | 0.06 |
| Nylon, Type 6, cast (Planetary Milling Jar)(Roller Milling Jar) | 0.25 |
| Nylon, Type 6/6, molding compound | 0.7 |
| Osmium | 87.6 |
| Palladium (Sputtering Target) | 71.2 |
| Paraffin | 0.25 |
| Platinum (Sputtering Target) | 71.6 |
| Plutonium | 0.065 |
| Polybutylene (PB) | 0.27 |
| Polycarbonate (PC) | 0.2 |
| Polyester | 0.05 |
| Polyethylene terephthalate (PET) (Indium Tin Oxide on PET)(Monolayer Graphene on PET) | 0.28 |
| Polypropylene (PP), unfilled (Single Crystal, Wafer Substrate Cases) | 0.11 |
| Polystyrene (PS) | 0.03 |
| Polysulfone (PSO) | 0.26 |
| Polyurethane (PUR), rigid (Planetary and Roller Milling Jars) | 0.02 |
| Polyvinyl chloride (PVC) | 0.14 |
| Porcelain, Industrial | 1.05 |
| Potassium | 100 |
| Potassium Bromide, KBr (Single Crystal) | 4.81 |
| Potassium Chloride, KCl (Single Crystal) | 6.63 |
| Potassium Tantalate, KTaO3 (Single Crystal) | 19 |
| Praseodymium (Sputtering Target) | 13 |
| Praseodymium Fluoride, PrF3 (Sputtering Target) | |
| Praseodymium Oxide, Pr6O11 (High Purity Powder)(Sputtering Targets) | |
| Promethium | 17.9 |
| Quartz (Single Crystal Wafer)(Monolayer Graphene on Quartz) | Parallel to a-6.2, c-10.7 |
| Rhenium (Sputtering Target) | 48 |
| Rhenium Disilicide, ReSi2 | |
| Rhodium | 151 |
| Ruthenium (Sputtering Target) | 117 |
| Samarium (Sputtering Target) | 13 |
| Samarium Oxide, Sm2O3 (High Purity Powder)(Sputtering Targets) | 1.9 |
| Sapphire (Single Crystal and Wafers) | 43.93 |
| Scandium (Sputtering Target) | 12.55 |
| Scandium Oxide, Sc2O3 (High Purity Powder)(Sputtering Targets) | 16.5 |
| Selenium (Sputtering Target) | 0.75 |
| Silicon (Single Crystal Wafer)(Sputtering Target)(N-type Sputtering Target)(P-type Sputtering Target) | 125.5 |
| Silicon Carbide, SiC (Single Crystal Wafer) (Sputtering Target) | 360-490 @300K depending on polytype |
| Silicon Dioxide (Fused Silica, amorphous),
SiO2 (Sputtering Target)(Wafers and Substrates)(High Purity Powder) |
1.4 |
| Silicon Nitride,Si3N4 (Sputtering Target) | 26 |
| Silver (Sputtering Target) | 429 |
| Sodium | 133.89 |
| Sodium Chloride, NaCl (Single Crystal) | 8.16 |
| Sodium Fluoride, NaF (Sputtering Target) | 10.5 |
| Solder lead - tin, 50% - 50% | 50 |
| Steel 18 Ni(300) (Maraging) (Additive Manufacturing/3D Printing Powder) | 25.3 |
| Steel Invar 36 (Additive Manufacturing/3D Printing Powder) | 10.15 |
| Steel M2 (Tool)(Additive Manufacturing/3D Printing Powder) | 19 |
| Steel Stainless Austenitic (304) (Milling media)(Planetary Milling Jars)(Roller Milling Jars) | 16.2 |
| Steel Stainless Austenitic (310) | 14.2 |
| Steel Stainless Austenitic (316)(Additive Manufacturing/3D Printing Powder)(Milling media)(Roller Milling Jars)(Planetary Milling Jars) | 15 |
| Steel Stainless Ferritic (410)(Additive Manufacturing/3D Printing Powder) | 24.9 |
| Steel Stainless 17-4PH (Additive Manufacturing/3D Printing Powder) | 17.9 |
| Steel Stainless 440C (Additive Manufacturing/3D Printing Powder) | 24.2 |
| Strontium | 35 |
| Strontium Fluoride, SrF2 (Sputtering Target) | 9.9 |
| Strontium Titanate, SrTiO3 (Sputtering Target)(Single Crystal Wafers & Substrates) (Fe doped single Crystal)(Nb doped single Crystal) | 10.1 |
| Tantalum (Sputtering Target) | 57.5 |
| Tantalum Carbide, TaC (Sputtering Target) | 21 |
| Tantalum Diboride, TaB2 | 16 |
| Tantalum Disilicide, TaSi2 (Sputtering Target) | |
| Tantalum Nitride, TaN (Sputtering Target) | 5.5 |
| Tantalum Pentoxide, Ta2O5 (Sputtering Target)(High Purity Powder) | |
| Tantalum Sulfide, TaS2 (Sputtering Target) | 140 |
| Teflon, (Sputtering Target)(Planetary Milling Jars)(Roller Milling Jars) | .25 |
| Tellurium (Sputtering Target) | 3 |
| Tellurium Dioxide,TeO2 (Single Crystal) | 3 |
| Terbium (Sputtering Target) | 11 |
| Thallium | 46 |
| Thorium | 54 |
| Thulium (Sputtering Target) | 16.9 |
| Thulium Oxide, Tm2O3 (High Purity Powder)(Sputtering Targets) | 4.4 |
| Tin (Sputtering Target) | 66.6 |
| Tin Oxide SnO2 (Sputtering Targets) | 17.5 |
| Titanium (Sputtering Target) | 17 |
| Titanium Alloy Ti-6Al-4v (TC4)(Additive Manufacturing/3D Printing Powder) | 6.7 |
| Titanium Carbide, TiC (Sputtering Target) | 22 |
| Titanium Diboride, TiB2 (Sputtering Targets) | 66.4 |
| Titanium Dioxide (Rutile), TiO2 (Single Crystal)(High Purity Powder)(Sputtering Target) | 4.8 |
| Titanium Disilicide, TiSi2 (Sputtering Target) | 38 |
| Titanium Monoxide, TiO (Sputtering Target) | |
| Titanium Nitride, TiN (Sputtering Target) | 19 |
| Titanium (III) Oxide, Ti2O3 (High Purity Powder) | 0.02 |
| Titanium Silicide, Ti5Si3 | |
| Topas | 0.15 |
| Tungsten (Sputtering Target) | 173 |
| Tungsten Carbide (Cobalt Stabilized), WC-6%Co (Sputtering Target)(Milling Media) (Planetary Milling Jars)(Pellet Pressing Die) | 110 |
| Tungsten Diboride, WB2 | 1.4 |
| Tungsten Dioxide, WO2 | 157.5 |
| Tungsten Diselenide, WSe2 (Sputtering Target) | 72.7 |
| Tungsten Disilicide, WSi2 (Sputtering Target) | 40.6 |
| Tungsten Disulfide, WS2 (Sputtering Target) | 121.2 |
| Tungsten Ditelluride, WTe2 (Sputtering Target) | 30.2 |
| Tungsten (VI) Oxide, WO3 (High purity Powder)(Sputtering Target) | 25.1 |
| Uranium | 27 |
| Vanadium (Sputtering Target) | 35 |
| Vanadium Carbide, VC (Sputtering Target) | 36.4 |
| Vanadium Disilicide, VSi2 (Sputtering Target) | |
| Vanadium Nitride, VN | 12.1 |
| Vanadium Oxide, V2O5 (Sputtering Target) | 3.84 |
| Vinyl Ester | 0.25 |
|
YCOB, Ca4YO(BO3)3 (NLO Crystal) |
Parallel to a-1.83, b-1.72, c-2.17 |
| Ytterbium (Sputtering Target) | 38.5 |
| Ytterbium Fluoride, YbF3 (Sputtering Target) | |
| Ytterbium Oxide, Yb2O3 (High Purity Powder)(Sputtering Targets) | 4.5 |
| Yttrium (Sputtering Target) | 17 |
| Yttrium Aluminum Garnet (YAG),Y3Al5O12 (YAG Single Crystal)(Ce:YAG single Crystal)(Er:YAG Single Crystal)(Nd:YAG Single Crystal)(Yb:YAG Single Crystal)(Ce:YAG LED Phosphor) | 10.8 |
| Yttrium Fluoride, YF3 (Sputtering Target) | |
| Yttrium Oxide, Y2O3 (High Purity Powder)(Sputtering Targets) | 13.6 |
| Yttrium Orthovanadate, YVO4 (Single Crystal) (Nd doped Single Crystal) | 14 |
| Zinc (Sputtering Target) | 112.2 |
| Zinc Oxide, ZnO (Single Crystal)(Sputtering Target)(High Purity Powder) | 50 |
| Zinc Selenide, ZnSe (Sputtering Target) | 14 |
| Zinc Sulfide, ZnS (Sputtering Target) | 25.1 |
| Zinc Telluride, ZnTe (Sputtering Target) | 10.8 |
| Zirconium (Sputtering Target) | 23 |
| Zirconium Carbide, ZrC (Sputtering Target) | 33.5 |
| Zirconium Diboride, ZrB2 (Sputtering Target) | 25.1 |
| Zirconium Disilicide, ZrSi2 (Sputtering Target) | |
| Zirconium Nitride, ZrN (Sputtering Target) | 8.8 |
| Zirconia, ZrO2 (High Purity Powder) | 2 |
| Yttria Stabilized Zirconia (YSZ), 3-8% Y2O3 /ZrO2 (Sputtering Target)(Single Crystal)(Milling Media)(Planetary Milling Jars)(High Purity Powder) | 3% =2.2 , 8% =2.9 |
*Unless otherwise noted values at 25°C.
