MSE PRO 4-Inch 4H-Silicon Carbide (SiC) Semi-Insulating Substrate, Research Grade
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MSE PRO 4-Inch 4H-Silicon Carbide (SiC) Semi-Insulating Substrate, Research Grade
Introduction
Silicon Carbide (SiC) wafers are advanced wide-bandgap semiconductor substrates that enable high-voltage, high-temperature, and high-efficiency device operation. They are essential for next-generation power electronics in electric vehicles, renewable energy, industrial systems, and aerospace applications.
Specification
| Grade | Research Grade | |
| Diameter | 100.0 mm +/- 0.5 mm | |
| Thickness | 500 um +/- 25 um | |
| Wafer Orientation | On axis: <0001> +/- 0.5 deg for 4H-SI | |
| Off axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N | ||
| Micropipe Density (MPD) | 15 cm-2 | |
| Electrical Resistivity, 4H-SI, (Ohm-cm) | >1E5 | |
| Doping Concentration | N-type: ~ 1E18/cm3 | |
| SI-type (V-doped): ~ 5E18/cm3 | ||
| Primary Flat | {10-10} +/- 5.0 deg | |
| Primary Flat Length | 32.5 mm +/- 2.0 mm | |
| Secondary Flat Length | 18.0 mm +/- 2.0 mm | |
| Secondary Flat Orientation | Silicon face up: 90 deg CW from Primary flat +/- 5.0 deg | |
| Edge exclusion | 3 mm | |
| LTV/TTV /Bow /Warp | 10um /15um /25um /40um | |
| Surface Roughness | Optical Polish Ra < 1 nm on the C face | |
| CMP Ra < 0.5 nm on the Si face | ||
| Cracks inspected by high intensity light | 1 allowed, 1 mm | |
| Hex Plates inspected by high intensity light* | Cumulative area 1 % | |
| Polytype Areas inspected by high intensity light* | Cumulative area 2% | |
| Scratches inspected by high intensity light** | 5 scratches to 1 x wafer diameter Cumulative length | |
| Edge chipping | 3 allowed, 0.5 mm each | |
| Surface Contamination as inspected by high intensity light | None | |
Properties of Silicon Carbide Crystal Materials
| Property | 4H-SiC Single Crystal |
| Lattice Parameters (Å) | a=3.076 |
| c=10.053 | |
| Stacking Sequence | ABCB |
| Density | 3.21 |
| Mohs Hardness | ~9.2 |
| Thermal Expansion Coefficient (CTE) (/K) | 4-5 x 10-6 |
| Refraction Index @750nm | no = 2.61 |
| ne = 2.66 | |
| Dielectric Constant | c ~ 9.66 |
| Doping Type | N-type or Semi-insulating |
| Thermal Conductivity (W/cm-K @298K) | a~4.2 |
| (N-type, 0.02 ohm-cm) | c~3.7 |
| Thermal Conductivity (W/cm-K @298K) | a~4.9 |
| (Semi-insulating type) | c~3.9 |
| Band-gap (eV) | 3.23 |
| Break-Down Electrical Field (V/cm) | 3-5 x 106 |
| Saturation Drift Velocity (m/s) | 2.0 x 105 |
| Wafer and Substrate Sizes | Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request |
| Product Grades | A Grade Zero micropipe density (MPD 1 cm-2) |
| B Grade Production grade (MPD 5 cm-2) | |
| C Grade Research grade (MPD 15 cm-2) | |
| D Grade dummy grade (MPD 30 cm-2) |
Notes
* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.
** The scratches are checked on the Si face only.
Price
MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. Contact us today to get your quote.
For bulk orders of more than 10 pieces, please contact us for special pricing.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.