MSE Supplies offers 4 inch 3C-N Silicon Carbide Wafers N-Type SiC Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with diamond-like structure. It has several superior properties than the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC power devices is expected to be better, cheaper, and easier to manufacture than the currently mainstream 4H-SiC wafer. It is exceptionally suitable for power electronic devices.

Specification:

Grade	Production Grade	Dummy Grade
Diameter	100 mm +/- 0.5 mm
Thickness	350 um +/- 25 um
Polytype	3C
Micropipe Density (MPD)	5 cm^-2	30 cm^-2
Electrical Resistivity	0.0005~0.001 Ohm.cm	0.001~0.0015 Ohm.cm

* Please contact us for detail specification and quote.

**For production grade, please contact us for availability.

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property	4H-SiC Single Crystal	3C-SiC Single Crystal
Lattice Parameters (Å)	a=3.076 c=10.053	a=4.36
Stacking Sequence	ABCB	ABC
Density (g/cm³)	3.21	3.166
Mohs Hardness	~9.2	~9.2
Thermal Expansion Coefficient (CTE) (/K)	4-5 x 10^-6	2.5-3.5 x10^-6
Dielectric Constant	c ~ 9.66	c ~ 9.72
Doping Type	N-type or Semi-insulating or P-type	N-type
Band-gap (eV)	3.23	2.4
Saturation Drift Velocity (m/s)	2.0 x 10⁵	2.5 x 10⁵
Wafer and Substrate Sizes	Wafers: 2, 4 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.

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