News — GaN

Researchers at Tohoku University have discovered a method to quickly, cost-effectively, and non-destructively detect carbon impurities in nitride-based crystals that are used in electrical and optical devices such as LEDs and transistors.  Light can be used to analyze the crystals for defects through omnidirectional photoluminescence (ODPL) spectroscopy, which is a marked improvement over the current methodologies available to the semiconductor industry.  ODPL illuminates the crystal, in this case gallium nitride (GaN), and is absorbed by it, exciting the electrons within.  When they return to their ground state, the crystal emits light to dissipate the absorbed energy.  Spectroscopy will then determine...

Researchers at the University of Delaware have developed a new, high-electron mobility transistor based on gallium nitride (GaN) with a barrier of indium aluminum-nitride on top of a silicon substrate.  Among its record-setting properties, the new transistor demonstrates the following: Low gate leakage current that ensures over the operation of the device, it does not lose a significant amount of current in the form of heat and general efficiency loss High on/off current ratio which generates a large, measureable difference in the magnitude of current that is transmitted when the device is in its on state versus its off state...

Researchers at the University of Illinois at Chicago have used computer-based simulations to discover the general mechanism that governs crystal growth in materials – fluctuations in the solvent shield.  The solvent shield is a molecular shell comprised of solvent molecules that coalesce around a crystalline material when said material is immersed within a solvent.  Fluctuations in this shield allow molecules to break free and incorporate themselves into the crystal's surface in order to grow the overall structure, molecule by molecule.  The temperature, the solvent type, and the number of solvent molecules are all controllable variables that determine these shell fluctuations. ...

As a supplier of high quality silicon carbide (SiC) and gallium nitride (GaN) wafers and substrates, MSE Supplies LLC participates in the compound semiconductor industry's CS MANTECH 2019 conference and exhibit in Minneapolis, MN (April 29 - May 2, 2019).   At CS MANTECH 2019, MSE Supplies will give a talk on the supply of SiC wafers and substrates to meet the surging demand of SiC-based semiconductors. MSE Supplies is a supplier of high quality SiC substrates and wafers including sizes of 2", 3", 4" and 6" with both N type and Semi-insulating type available.  Its SiC substrates and wafers have been used by many SiC-based...

According to a market research report published by Research and Markets, the global gallium nitride (GaN) substrates market size is forecast to grow at a CAGR of 11.75% from 2017 to 2022, and will reach the total market size of US$442.084 million by 2022, increasing from US$253.700 million in 2017. The ability to provide wider bandgap, high breakdown voltage, larger critical electric field, and high thermal conductivity is driving the growth of gallium nitride substrates market leading to a shift of industry manufacturers from silicon technology to gallium nitride substrates. MSE Supplies is a leading supplier of gallium nitride (GaN)...