High Thermal Conductivity Aluminum Nitride (AlN) Ceramic Substrate
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Aluminum Nitride (AlN) Ceramic Substrate is made of high purity AlN ceramics. AlN is a white ceramic material with excellent comprehensive properties. These properties include excellent thermal conductivity (>170W/mK), electrical insulation and heat radiation, which make it suitable for electrical applications. AlN is also widely used in semiconductor industry for the replacement of Beryllium Oxide (BeO) due to that AlN isn't hazardous under machining. Other properties also include resistance to thermal shock, low dielectric constant and dielectric loss, and a coefficient of thermal expansion compatible with silicon, which make AlN substrate an ideal material for semiconductor industry and electronic device packaging.
Specification:
| Properties | High Thermal AlN |
| Thermal conductivity at RT (W/m・K) | 250 |
| Heat radiation at 100°C | 0.93 |
| Thermal expansion coefficient (10-6/°C) | 4.5 |
|
Insulation resistance at RT (Ω.cm) |
> 1013 |
| Dielectric voltage at RT (kV/mm) | 10 |
| Dielectric constant (1MHz) | 8.8 |
| Dielectric loss (10-4 1MHz) | 5 |
| Flexural strength (MPa) | 300 |
| Density (g/cm3) | 3.32 |
| Yttria (%) | 3.4 |
| Oxygen (%) | 1.7 |
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