MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer
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$ 303.95
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MSE PRO™ 4 inch Copper (Cu) Thin Film on Silicon Wafer
Copper (Cu) is a promising candidate for use in electronic packaging and ultra-large scale integrated (ULSI) devices due to its low resistivity and high electro-migration resistance. Cu films deposited by CVD and sputtering tend to be microcrystalline whilst electroless deposition on activated surfaces produces fine-grained copper initially, followed by the growth of a columnar structure.
Specifications:
| Size | 4 inch |
| Substrate | Silicon wafer |
| Substrate Doping Type | P-type/ Boron-doped |
| Substrate Orientation | <100> |
| Substrate Resistivity | 1-100 ohm-cm |
| Deposition Method | PVD |
| Substrate Surface |
Single Side Polished |
| Thin Film Material | Copper (Cu) |
| Thin Film Thickness | 50 nm - 1500 nm customizable |