MSE PRO™ (001) Beta Gallium Oxide Homoepitaxial Wafer, Ga₂O₃-on-Ga₂O₃, N-type

MSE Supplies offers various sizes of ß-Ga₂O₃homoepitaxial wafer. It is a thin layer of gallium oxide crystal on top of the same material. It has excellent electrical and material properties including high breakdown voltage, wide bandgap, and low on resistance. It is widely used in high-performance power electronics devices for electrical vehicles, sensors, photodetectors, etc.

Specification:

General Wafer
Diameter	15 mm x 10 mm (WA0531) ; 50.8 mm (WA0532)
Thickness	500 ± 20 μm (WA0531) ; 650 ± 30 (WA0532)
XRD FWHM	≤ 150 arcsec
Surface Roughness	RMS ≤ 3 nm (10 μm × 10 μm)
Epi Layer
Material	ß-Ga₂O₃
Thickness	250 ± 50 nm
Uniformity	≦ 10%
Doping	UID
Substrate
Material	ß-Ga₂O₃
Type/Dopant	N-type / Sn-doped
Orientation	(001) ± 1°
Nd-Na	1E18 - 2E19 cm^-3

Please contact us for bulk order or customized shape, size, thickness and substrate.

References:

1. Recent progress in the growth of β-Ga2O3 for power electronics applications. Materials Science in Semiconductor Processing 78 (2018): 132-146.

2. Growth and characterization of homoepitaxial β-Ga2O3 layers. Journal of Physics D: Applied Physics 53, no. 48 (2020): 484002.

MSE PRO™ (001) Beta Gallium Oxide Homoepitaxial Wafer, Ga2O3-on-Ga2O3, N-type

Specification:

MSE PRO™ (001) Beta Gallium Oxide Homoepitaxial Wafer, Ga₂O₃-on-Ga₂O₃, N-type

Ga2O3 Epitaxial