Home » Selenide Ceramic Sputtering Targets » MSE PRO Boron Carbide Sputtering Target B4C
MSE PRO Boron Carbide Sputtering Target B<sub>4</sub>C AI image
MSE PRO Boron Carbide Sputtering Target B<sub>4</sub>C AI image
MSE Supplies

MSE PRO Boron Carbide Sputtering Target B4C

Order upon Request
SKU: TA1101
$ 629.95

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Boron Carbide Sputtering Targets Specifications

To add a Cu Backing Plate with Indium Bonding for Sputtering Targets

  • Purity: 99.5%
  • Density: 2.51g/cc
  • Shape: Discs, Plate, Step ( Dia 300mm, Thickness 1mm) Rectangle, Sheet, Step ( Length1000mm,Width 300mm, Thickness 1mm) Tube( Diameter< 300mm, Thickness >2mm, )
  • Custom sizes are available.
  • Application: B4C in general are used for wear-resistant films and semi-conducting films.

B4C are used as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level.

Boron Carbide Powder - B4C

  • Purity: 99.5%,98%
  • Shape: Powder