MSE PRO 2''P-type B-doped Silicon wafer <100>, 280 um thick, SSP, 0.001-0.005 ohm-cm
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$ 34.95
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SE PRO 2''P-type B-doped Silicon wafer <100>, 280 um thick, SSP, 0.001-0.005 ohm-cm
Product Specification
- Material: Single Crystal Silicon Wafer
- Growth Method: CZ
- Orientation: <100> +/- 1 deg
- Diameter: 50.8 mm +/- 0.5 mm
- Thickness: 280 um +/- 25 um
- Type/ Dopant: P/ Boron
- Electrical Resistivity: 0.001-0.005 ohm-cm
- Surface Finish: Single Side Polished (SSP)
- Grade: Test Grade
- Flatness: 1 SEMI
- TTV: <10 um
- BOW:<40 um
- WARP: <40 um
MSE Supplies also offer 3'', 4'', 6'' 8" and 12" intrinsic and doped silicon wafers with high (>20000 ohm-cm) and low resistivity (0.001-0.005 ohm-cm).
Please contact us if you need to place bulk orders or need customization.