MSE PRO 6''P-type B-doped Silicon wafer <100>, 675 um thick, SSP, 0.001-0.005 ohm-cm
Regular price
$ 79.95
Couldn't load pickup availability
Still have questions? Ask our experts!
MSE PRO 6''P-type B-doped Silicon wafer <100>, 675 um thick, SSP, 0.001-0.005 ohm-cm
Product Specification
- Material: Single Crystal Silicon Wafer
- Growth Method: CZ
- Orientation: <100> +/- 1 deg
- Diameter: 150 mm +/- 0.5 mm
- Thickness: 675 um +/- 25 um
- Type/ Dopant: P/ Boron
- Electrical Resistivity: 0.001-0.005 ohm-cm
- Surface Finish: Single Side Polished (SSP)
- Grade: Prime Grade
- Flatness: 1 SEMI
- TTV: <10 um
- BOW:<30 um
- WARP: <30 um
MSE Supplies also offer 3'', 4'', 6'' 8" and 12" intrinsic and doped silicon wafers with high (>20000 ohm-cm) and low resistivity (0.001-0.005 ohm-cm).
Please contact us if you need to place bulk orders or need customization.