German scientists from the University of Münster developed a high performance solid‐state lithium–sulfur battery, and delivered advanced performance with high initial discharge capacity 1772 mAh g−1 and excellent rate performance: 1183 mAh g−1 at 0.2 C and 719 mAh g−1 at 0.5 C,...
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Researchers at Tohoku University have discovered a method to quickly, cost-effectively, and non-destructively detect carbon impurities in nitride-based crystals that are used in electrical and optical devices such as LEDs and transistors. Light can be used to analyze...
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Researchers at the Pohang University of Science & Technology (POSTECH) Department of Chemistry have discovered that redox reactions can be used to control the properties of two-dimensional (2D) materials. Redox reactions between water and oxygen molecules in the...
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Researchers at the University of Delaware have developed a new, high-electron mobility transistor based on gallium nitride (GaN) with a barrier of indium aluminum-nitride on top of a silicon substrate.
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An international conglomerate of scientists and researchers from Drexel, Stanford, Graphene Labs, the Center for Advancing Electronics Dresden (CFAED) and others have collaborated to develop a report that details how the future of energy storage technology lies in...
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Researchers at the University of California Santa Barbara have developed an improved fabrication technique to develop deep-ultraviolet light-emitting diodes (LEDs) and optoelectronics that combat dangerous pathogens.
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