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220 gallium nitride MOCVD reactors to be installed in 2015 for LED production

Posted by MSE Supplies on

View Gallium Nitride (GaN) product offerings on MSE Supplies website:

http://www.msesupplies.com/collections/thin-film-processing/gan

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According to John Wallace, Editor of LaserFocusWorld, "LEDs as a business are growing rapidly in China, spurring purchase of the high-unit-cost capital equipment needed for LED fabrication. Due to the aggressive expansion plans of some Chinese LED companies, 220 metal-organic chemical-vapor-deposition (MOCVD) gallium nitride (GaN) reactors will be installed in 2015, according to the latest data in the IHS LED Intelligence Service. (MOCVD reactors are used to deposit GaN-based epitaxial films on substrates such as sapphire, silicon, or GaN, providing the LED's light-emitting structure.)"

220 gallium nitride MOCVD reactors to be installed in 2015 for LED production

Top 20 cumulative MOCVD merchant tool customers in the LED industry by the end of Q4'2014

For more info, see https://technology.ihs.com/Services/467369/led-intelligence-service

Source: Alice Tao, senior market analyst, IHS

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