Applications:
- Non-linear Optics
- Electro–optics Modulators
- Ferroelectric Memory Devices
- Others
Specification:
| General Wafer | |
| Structure | LiNbO3/ Oxide / Si |
| Diameter | Φ150 ± 0.2 mm |
| Thickness | 675 ± 25 μm |
| Primary Flat Length | 47.5 ± 2 mm |
| Wafer Beveling | R Type |
| TTV | < 10 μm |
| LTV | < 1.5 μm (5∗5 mm2) / 95% |
| Bow | ± 50 μm |
| Warp | < 50 μm |
| Edge Trimming | 2 ± 0.5 mm |
| Lithium Niobate Layer | |
|
Average Thickness (Can be customized between 300-600nm) |
360 nm (WA4004) 600 nm (WA4005) |
| Orientation | X axis ± 0.5° |
| Primary Flat Orientation | Z axis ± 1° |
| Front Surface Roughness (Ra) | < 1 nm |
| Bond Defects | > 1 mm None ; ≦ 1 mm within 80 total |
| Front Surface Scratch |
> 1 cm None ; ≦ 1 cm within 3 total |
| Oxide Layer | |
| Thickness | 4700 ± 150 nm |
| Uniformity | ± 5% |
| Substrate | |
| Material | Si |
| Orientation | <100> ± 1° |
| Primary Flat Orientation | <110> ± 1° |
| Resistivity | > 10 kΩ·cm |
| Backside | Etched |