MSE PRO 4 inch Titanium Nitride (TiN) Thin Film on Silicon Wafer
MSE PRO™ 4 inch Titanium Nitride (TiN) Thin Film on Silicon Wafer
Titanium Nitride (TiN) exhibits plasmonic response in the visible and near-infrared ranges, similar to noble metals. Titanium nitride is utilized in a wide range of applications for space, biomedicine, microelectronics industry, and so on due to its excellent physical, chemical, electrical and mechanical properties. The properties that make titanium nitride suitable for applications such as mentioned above are its high hardness, good adhesive wear and resistance to corrosion, high melting temperature, thermal and chemical stability, biocompatibility and so forth.
Specifications:
| Size | 4 inch |
| Substrate | Silicon wafer |
| Substrate Thickness | 775 um +/- 25um |
| Substrate Doping Type | P-type/ Boron-doped |
| Substrate Orientation | <100> |
| Substrate Resistivity | 1-100 ohm-cm |
| Deposition Method | PVD |
| Substrate Surface |
Single Side Polished |
| Thin Film Material | Titanium Nitride (TiN) |
| Thin Film Thickness | 50 nm - 300nm customizable |
References:
[1] Leonid Yu. Beliaev, Evgeniy Shkondin, Andrei V. Lavrinenko, Osamu Takayama,
Optical properties of plasmonic titanium nitride thin films from ultraviolet to mid-infrared wavelengths deposited by pulsed-DC sputtering, thermal and plasma-enhanced atomic layer deposition, Optical Materials, Volume 143, 2023, 114237.