MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer

$ 269⁹⁵
Save $ 29⁰⁵

MSE PRO™ 4 inch Copper (Cu) Thin Film on Silicon Wafer

Copper (Cu) is a promising candidate for use in electronic packaging and ultra-large scale integrated (ULSI) devices due to its low resistivity and high electro-migration resistance. Cu films deposited by CVD and sputtering tend to be microcrystalline whilst electroless deposition on activated surfaces produces fine-grained copper initially, followed by the growth of a columnar structure.

Specifications:

Size	4 inch
Substrate	Silicon wafer
Substrate Thickness	775 um +/- 25um
Substrate Doping Type	P-type/ Boron-doped
Substrate Orientation	<100>
Substrate Resistivity	1-100 ohm-cm
Deposition Method	PVD
Substrate Surface	Single Side Polished
Thin Film Material	Copper (Cu)
Thin Film Thickness	50 nm - 1500 nm customizable

Reference:

[1] Shengde Zhang, Masao Sakane, Takeshi Nagasawa, Kaoru Kobayashi, Mechanical Properties of Copper Thin Films Used in Electronic Devices, Procedia Engineering, Volume 10, 2011, Pages 1497-1502.

[2] M. O'Reilly, X. Jiang, J.T. Beechinor, S. Lynch, C. NíDheasuna, J.C. Patterson, G.M. Crean, Investigation of the oxidation behaviour of thin film and bulk copper, Applied Surface Science, Volume 91, Issues 1–4, 1995, Pages 152-156.