Home » MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer
MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer, Wafers, MSE Supplies LLC, MSE Supplies
MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer, Wafers, MSE Supplies LLC, MSE Supplies
MSE Supplies LLC

MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer

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SKU: WA5328
$ 296.95
$ 332.58 $ 296.95

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MSE PRO™ 4 inch Copper (Cu) Thin Film on Silicon Wafer

Copper (Cu) is a promising candidate for use in electronic packaging and ultra-large scale integrated (ULSI) devices due to its low resistivity and high electro-migration resistance. Cu films deposited by CVD and sputtering tend to be microcrystalline whilst electroless deposition on activated surfaces produces fine-grained copper initially, followed by the growth of a columnar structure.

Specifications:

Size 4 inch
Substrate Silicon wafer
Substrate Doping Type P-type/ Boron-doped
Substrate Orientation <100>
Substrate Resistivity 1-100 ohm-cm
Deposition Method PVD
Substrate Surface
 Single Side Polished
Thin Film Material Copper (Cu)
Thin Film Thickness 50 nm - 1500 nm customizable

Reference:

[1] Shengde Zhang, Masao Sakane, Takeshi Nagasawa, Kaoru Kobayashi, Mechanical Properties of Copper Thin Films Used in Electronic Devices, Procedia Engineering, Volume 10, 2011, Pages 1497-1502.

[2] M. O'Reilly, X. Jiang, J.T. Beechinor, S. Lynch, C. NíDheasuna, J.C. Patterson, G.M. Crean, Investigation of the oxidation behaviour of thin film and bulk copper, Applied Surface Science, Volume 91, Issues 1–4, 1995, Pages 152-156.