MSE PRO 2 inch Semi-Insulating GaN 2 um Gallium Nitride Template on Sapphire (0001)

Product Description: 2 inch Semi-Insulating GaN 2 um Gallium Nitride Template on Sapphire (0001)

Product SKU#: WA0203

Specifications:

• Conductivity type: semi-insulating
• Doping type: un specified
  
• Dimension: 2 inch diameter
  
• GaN Thickness: 2 micron +/-10%
  
• Orientation: C plane (0001) +/- 0.5 deg
• Primary Orientation Flat: (1-100) +/- 0.5 degree, length 16.0 +/- 1.0 mm
  
• Resistivity (300K): >1x10⁶ Ohm-cm
  
• Substrate Structure: GaN on Sapphire (0001)
  

• Sapphire substrate thickness: 430 +/- 25 um

• Orientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1
• Orientation Flat of sapphire: (11-20) 0 ± 0.2 deg, length 16.0 +/- 1.0 mm
• Polishing: as grown
  

Related Reference

Semi-insulating GaN substrates for high-frequency device fabrication

Abstract

Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.