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5 x 20 mm, M plane (1-100), N-Type, undoped, free-standing Gallium Nitride (GaN) - MSE Supplies

5 x 20 mm, M plane (1-100), N-Type, undoped, free-standing Gallium Nitride (GaN)

  • 1,01900


    • Conductivity type: N-Type ( undoped)
    • Dimension: 5.0 mm x 20 mm ± 0.2 mm
    • Thickness: 350 ± 25 μm
    • Usable area: > 90%
    • Orientation: M plane (1-100) 
    • Total Thickness Variation: <15 μm
    • Bow: <20 μm
    • Resistivity (300K): < 0.5 Ω·cm
    • Carrier Concentration:1e17cm-3
    • Mobility: 500 cm2/V*s
    • Dislocation Density: < 5x10^5 cm^-2 
    • Polishing:  front surface Ra < 0.2nm. Epi-ready polished. back surface fine ground.
    • Package: packaged in a class 100 clean room environment, in single wafer containers, under nitrogen atmosphere. 

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