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NdGaO3, Neodymium Gallate Crystal Substrate,  MSE Supplies

NdGaO3, Neodymium Gallate Crystal Substrate

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Main Parameters
Growth Method
orthogonal
Unit cell constant
a=5.43、b=5.50、c=7.71
Melt point(℃)
1600℃
Density
7.57g/cm3
Dielectric constants
25
Growth method
hanging maneuver method
Size
10x3, 10x5, 10x10, 15x15, 20x15, 20x20
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″
Thickness
0.5mm, 1.0mm
Polishing
Single or double
Crystal orientation
<100>  <110>  <111>
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon request
Ra:
≤5Å(5µm×5µm)
Pack
Class 100 clean bag packed in class 1000 clean room

 

NdGaO3 crystal is a new single-crystal substrate material developed in recent years. NdGaO3 substrates are mainly used for high-temperature superconductors (YBCO) and magnetic Epitaxial films growth, because NdGaO3 and YBCO have small lattice mismatch (~0.27%), and no structural phase change at the crystal interface. 


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