MSE Supplies offers Desktop Atomic Layer Deposition System using thermal ALD technique. Atomic Layer Deposition (ALD) is a powerful thin-film deposition technique. Comparing to traditional Chemical Vapor Deposition (CVD), ALD allows even higher quality surface layer with nearly pinhole-free and excellent uniformity. These advantages are related to its controllable process. The whole process is continuous and self-limiting, which means the material in the chamber is slowly deposited by precursor separately in single atomic layer and the steps are repeated until achieving desired thickness. Our system is extremely compact and easy to use. It can be used to coat various materials, including HfO₂, ZnO, Al₂O₃, TiO₂, etc. It is capable of configuring up to 4 liquid/solid sources with 1 reaction gas line and 1 purging gas line. The upgrade option allows the chamber to accommodate the wafer up to 6 inch (standard: 4 inch). It is widely used in electronic, biomedical, photovoltaic and other applications.

Main Features:

• Ultra compact ALD 
• Quick start and easy to use & PM (Self Clean)
• Max 250°C chamber & 5ms ALD 200°C fast valve
• Full automation control with user friendly software
• High quality film deposition with 4 inch wafer non-unifmority < 1% (Al₂O₃)

Technical Specifications

Capable Deposition: HfO₂, ZnO, Al₂O₃, TiO₂, etc.

Options: ozone generator, precursor canister, precursor tube heater, reaction gas line (for ozone), dry vacuum pump, filter, chamber size upgrade, etc.

*Pleas contact us for detail specification and optional items.