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LED Grade, 2",  N-type, Ge-doped, Free-standing Gallium Nitride (GaN) single Crystal, C plane (0001) - MSE Supplies

LED Grade, 2", N-type, Ge-doped, Free-standing Gallium Nitride (GaN) single Crystal, C plane (0001)

  • 2,25900
  • Save $ 34000


LED GRADE 

Free-standing GaN substrate, C plane (0001), size 2" diameter

Conductivity type: N-type, Ge-doped
  • Dimension: 2" diameter
  • Thickness: 350 ± 25 μm
  • Usable area: >90%
  • Orientation: C plane (0001) ± 1°
  • Total Thickness Variation: <15 μm
  • Bow: <20 μm
  • Resistivity (300K): <0.05 ohm.cm
  • Carrier Concentration:1e18cm-3
  • Mobility: 220 cm2/V*s
  • Dislocation Density: < 5x105 cm-2 
  • Polishing: Front surface: Ra <0.2 nm, Epi ready, Back surface fine ground.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere. 

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