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Laser Diode Grade, 2 inch Ge-Doped N-type Gallium Nitride Single Crystal, C plane (0001),  MSE Supplies

Laser Diode Grade, 2 inch Ge-Doped N-type Gallium Nitride Single Crystal, C plane (0001)

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Free-standing (single crystal) GaN substrate, C plane (0001),  size 2 inch diameter
Conductivity type: N-type Ge-doped
  • Dimension: 2" diameter
  • Thickness: 350 ± 25 μm
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35°± 0.15° 
  • Total Thickness Variation: <15 μm
  • Bow: < 20 μm
  • Resistivity (300K): < 0.05 Ohm.cm
  • Carrier Concentration:1e18cm-3
  • Mobility: 220 cm2/V*s
  • Dislocation Density: < 9 x 105 cm-2
  • Polishing: Front surface: Ra < 0.2 nm, epi-ready polished. back surface fine ground.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere. 

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free‐standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review:  InGaN-BASED LASER DIODES 

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf

 


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