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InAs, Indium Arsenide, Single Crystal

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 Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide is similar to gallium arsenide and is a direct bandgap material.

Available Orientations: <100>, <111>, <411>, <511> and other orientations

Available Sizes: 5x5, 10*10, 2 inch diameter, 30 mm diameter. 

Doping Options: Undoped, S doping, Zn doped, and Sn doped.

Physical Properties
Chemical formula
InAs
Molar mass 189.740 g/mol
Density 5.67 g/cm3
Melting point 942 °C (1,728 °F; 1,215 K)
Band gap 0.354 eV (300 K)
Electron mobility 40000 cm2/(V*s)
Thermal conductivity 0.27 W/(cm*K) (300 K)
Refractive index(nD)
3.51
Structure
Crystal structure
Zinc Blende
Lattice constant
a = 6.0583 Å