InAs, Indium Arsenide, Single Crystal
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Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Available Orientations: <100>, <111>, <411>, <511> and other orientations
Available Sizes: 5x5, 10*10, 2 inch diameter, 30 mm diameter.
Doping Options: Undoped, S doping, Zn doped, and Sn doped.
|Molar mass||189.740 g/mol|
|Melting point||942 °C (1,728 °F; 1,215 K)|
|Band gap||0.354 eV (300 K)|
|Electron mobility||40000 cm2/(V*s)|
|Thermal conductivity||0.27 W/(cm*K) (300 K)|
a = 6.0583 Å