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Graphene Field-Effect transistors (GFETs) for Sensing Applications in Liquid

  • $ 46500


Graphene Field-Effect transistors GFET (Die size 10 mm x 10 mm) for Sensing Applications in Liquid

The ME0628-GFET chip provides 12 graphene devices designed for measurements in a liquid medium. These devices are encapsulated on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.

SKU#: ME0628

Measurement Protocols and Handling Instructions

FEATURES

  • State-of-the-art GFETs utilizing high-quality graphene
  • Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment
  • Perfect platform device for new sensor research and development
  • 12 individual GFETs per chip
  • A central gate electrode
  • Processed in Clean Room Class 1000

    APPLICATIONS

    • Graphene device research
    • Chemical sensors
    • Biosensors
    • Bioelectronics
    • Magnetic sensors
    • Photodetectors

    TYPICAL SPECIFICATIONS

    Chip dimensions

    10 mm x 10 mm

    Chip thickness

    675 μm

    Number of GFETs per chip

    12

    Gate Oxide thickness

    90 nm

    Gate Oxide material

    SiO2

    Resistivity of substrate

    1-10 Ω.cm

    Metallization

    Chromium/Gold 2/50 nm

    Encapsulation

    50 nm Al2O3 + 100 nm Si3N4

    Graphene field-effect mobility

    > 1000 cm2/V.s

    Dirac point (back gating)

    < 50 V

    Dirac point (liquid gating)

    <1v

    Yield

    > 75 %

     

    ABSOLUTE MAXIMUM RATINGS

    Maximum gate-source voltage (back gating)

    ± 50 V

    Maximum temperature rating

    150 °C

    Maximum drain-source current density

    107 A.cm-2

     

    References:

    N.S. Green and M.L. Norton. Interactions of DNA with graphene and sensing applications of graphene field-effect transistor devices: A review. Analytica Chimica Acta. Vol. 853, Pp 127-142, 2015.

     W. Fu, M.E. Abbassi, T.Hasler, M. Jung, M. Steinacher, M. Calame, C. Schonenberger, G. Puebla-Hellmann, S. Hellmuler, T. Ihn, and A. Wallraff. Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications. Appl. Phys. Lett. Vol 104(1), 2014.