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Limited Time Offer (Exp. 4/28/2017), Ten (10) Pieces, 10 x 10 mm, Undoped, N-type, free-standing Gallium Nitride (GaN) substrate C plane (0001),

  • 1,49000
  • Save $ 46000


Limited Time Offer (Exp. 4/28/2017)

N-type free-standing GaN substrate, size 10 mm x 10 mm, Single side polish

  • Conductivity type: N-Type
  • Dimension: 10.0 mm x 10.5 mm
  • Thickness: 350 ± 25 μ
  • Useable area: >90%
  • Orientation: C plane (0001) ± 1°
  • Total Thickness Variation: <15 μm
  • Bow: <20 μm
  • Resistivity (300K): < 0.5 Ω·cm
  • Carrier Concentration:1e17cm-3
  • Mobility: 500 cm2/V*s
  • Dislocation Density: < 5 x 105 /cm2
  • Polishing: Front surface: Ra <0.2 nm, Epi Ready, double-side polished wafers are available.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere. 

 


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