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6 inch Silicon Germanium (SiGe) Epitaxial Wafer - MSE Supplies LLC

6 inch Undoped Silicon Germanium (Si0.75Ge0.25) Epitaxial Wafer on Silicon (Si)

  • $ 1,19500


6 inch Undoped Silicon Germanium (Si0.75Ge0.25) Epitaxial Wafer on Silicon (Si)

Silicon Germanium (SiGe) alloys can be grown at mostly any composition on silicon (Si) substrate. It is discovered by researcher at IBM in the 1970s and 1980s and soon become one of the most important discovery in semiconductor. It enables complex strain engineering possibilities which can enhance properties of the semiconductor. Often times, low Germanium (Ge) content alloys (<50%) are grown directly on Si substrates while higher composition Ge alloys (>50%) are grown on relaxed Ge buffers. Compare to silicon, it not only increases the frequency and oscillating capabilities of devices, but also enhances the device performance. These advantages make it a cost-effective and smaller option. It is often used in high-speed integrated circuits, wireless communication and photonic applications. 

MSE Supplies offers epitaxy services on various substrate. Please contact us if you need customized specification.

Specification:

Substrate Silicon Wafer
Diameter 150±0.2 mm
Grade Prime
Growth Method  CZ
Orientation <100>
Thickness 500±25 um
Resistivity  1~5 ohm.cm
Type/Dopant P-type/Boron
Epi Layer  Si0.75Ge0.25 
Ge Content Tolerance ±2.5%
Epi Layer Thickness 100±10 nm
Epi Layer Dopant Undoped

*Please note that actual products might be different from the picture below.

References:

1. Thermal conductivity of epitaxial layers of dilute SiGe alloys. Physical Review B 71, no. 23 (2005): 235202.

2. Lattice contraction with boron doping in fully strained SiGe epitaxial layers. Japanese Journal of Applied Physics 57, no. 6 (2018): 065504


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