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5 x 20 mm, nonpolar N-Type, undoped, free-standing Gallium Nitride (GaN),  MSE Supplies

5 x 20 mm, nonpolar N-Type, undoped, free-standing Gallium Nitride (GaN)

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    • Conductivity type: N-Type ( undoped)
        • Dimension: 5.0 mm x 20 mm ± 0.2 mm
            • Thickness: 350 ± 25 μm
                • Usable area: > 90%
                    • Orientation: Other nonpolar planes
                        • Total Thickness Variation: <15 μm
                            • Bow: <20 μm
                                • Resistivity (300K): < 0.5 Ω·cm
                                    • Carrier Concentration:1e17cm-3
                                        • Mobility: 500 cm2/V*s
                                            • Dislocation Density: < 5x10^5 cm^-2 
                                                • Polishing:  front surface Ra < 0.2nm. Epi-ready polished. back surface fine ground.
                                                  • Package: packaged in a class 100 clean room environment, in single wafer containers, under nitrogen atmosphere.

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