Sapphire Wafer, 4 inch, R-plane (1-102), Single Crystal Al2O3
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- Material: High Purity >99.996%, single crystal Al2O3
- Dimension: Φ100 mm ± 0.1 mm
- Thickness: 0.65 mm standard
- Lattice Parameter: a=4.785 A, c=12.991 A
- Density: 3.98 g/cm3
- Orientation: R-plane (1-102) 0.2± 0.1 degree off.
- Primary Flat orientation: Projected C-Axis 45 +/- 2 degree
- Primary flat length: 30.0 ± 1 mm
- Total Thickness Variation: <20 μm
- Bow: <20 μm
- Warp: <20 μm
- Polishing: single side polished Ra < 0.5 nm (AFM), double size polish is available per request.
- Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.
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