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Patterned 4 inch Sapphire Wafer C-plane (0001), Single Crystal Al2O3

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  • Material: High Purity >99.996%, single crystal Al2O3
  • Dimension: Φ100 mm ± 0.1 mm
  • Pattern Specification: 2 x 1 x 1.5 diameter = 2.5 ± 0.2 μm, Spacing = 0.6 ± 0.2 μm, depth =1.5 ± 0.2 μm
  • Thickness: 0.65 mm ± 25 μm standard
  • Lattice Parameter: a=4.785 A, c=12.991 A
  • Density: 3.98 g/cm3
  • Orientation: C plane (0001) 0.2± 0.1 degree off.
  • Primary Flat Length: A-plane[11-20] +/- 0.2°
  • Primary flat length: 30.0 ± 1 mm
  • Total Thickness Variation: <20 μm
  • Bow: <20 μm
  • Warp: <20 μm
  • Polishing: single side epi polished.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 

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