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3 inch diameter (76 mm) Silicon Carbide (6H-SiC or 4H-SiC) Crystal Substrates, SiC Wafers, N-type or Semi-insulating

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3 inch diameter Silicon Carbide (SiC) Crystal Substrates, SiC Wafers Specification

Grade

Production Grade

Research Grade

Dummy Grade

Diameter

76.2 mm ± 0.38 mm

Thickness

350 μm ± 25 μm

Wafer Orientation

On axis: <0001> ± 0.5° for 6H-N /4H-N /4H-SI /6H-SI

Off axis: 4.0° toward <11-20> ±0.5° for 4H-N /4H-SI

Micropipe Density (MPD)

≤5 cm-2

≤15 cm-2

≤50 cm-2

Electrical Resistivity

4H-N

0.015~0.028 Ω·cm

6H-N

0.02~0.1 Ω·cm

4/6H-SI

>1E5 Ω·cm

(90%) >1E5 Ω·cm

Primary Flat

{10-10} ± 5.0°

Primary Flat Length

22.2 mm ± 3.2 mm

Secondary Flat Length

11.2 mm ± 1.5 mm

Secondary Flat Orientation

Silicon face up: 90° CW from Prime flat ± 5.0°

Edge exclusion

2 mm

TTV /Bow /Warp

≤15μm /≤25μm /≤25μm

Surface Roughness

Polish   Ra ≤1 nm

CMP    Ra ≤0.5 nm

Cracks by high intensity light

None

1 allowed, ≤1 mm

1 allowed, ≤2 mm

Hex Plates by high intensity light*

Cumulative area ≤1 %

Cumulative area ≤1 %

Cumulative area ≤3 %

Polytype Areas by high intensity light*

None

Cumulative area ≤2 %

Cumulative area ≤5%

Scratches by high intensity light**

3 scratches to 1 x wafer diameter

cumulative length

5 scratches to 1 x wafer diameter

cumulative length

8 scratches to 1 x wafer diameter

cumulative length

Edge chip

None

3 allowed, ≤0.5 mm each

5 allowed, ≤1 mm each

Contamination by high intensity light

None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present. 

** The scratches are checked on the Si face only.

 

 PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 ×10-6

4-5 ×10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm·K @298K)

(N-type, 0.02 ohm·cm)

a~4.2

c~3.7

  

Thermal Conductivity (W/cm·K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5×106

3-5×106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2”, 3”, 4”, 6”; small substrates: 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 mm, other sizes are available and can be custom-made upon request

Product Grades

A Grade – Zero micropipe density (MPD ≤ 1 cm-2)

B Grade – Production grade (MPD ≤ 5 cm-2)

C Grade – Research grade (MPD ≤ 15 cm-2)

D Grade – Dummy grade (MPD ≤ 50 cm-2)

 

Price:

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter.  Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications.  CONTACT US today to get your quote. 

Customization:

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. 

 

Applications of SiC Crystal Substrates and Wafers

Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high temperature, radiation resistant applciations.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates.  

III-V Nitride Deposition

GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on SiC substrate or sapphire substrate.

Gallium Nitride Epitaxy on SiC Templates are used to fabricate blue light emitting diodes (blue LED) and and nearly solar blind UV photodetectors

Optoelectronic Devices

SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.

SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions.

High Power Devices

SiC has the following properties:

Wide Energy Bandgap

High electrical breakdown field

High saturation drift velocity

High thermal conductivity

SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transitors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.

SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher thermal conductivity combined with wide bandgap and high critical field give SiC semiconductors an advantage when high power is a key desirable device feature.

Currently silicon carbide (SiC) is widely used for high power MMIC

applications. SiC is also used as a substrate for epitaxial growth of GaN for even higher power MMIC devices

High Temperature Devices

Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to be operated at extremely high power levels and still dissipate the large amounts of excess heat generated from the devices.  

High Frequency Power Devices

SiC-based microwave electronics are used for wireless communications and radar.


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