Menu
Cart

3 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating

To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.

3 inch diameter Silicon Carbide (SiC) Crystal Substrates, SiC Wafers Specifications

Grade

Production Grade

Research Grade

Dummy Grade

Diameter

76.2 mm ± 0.38 mm

Thickness

350 μm ± 25 μm

Wafer Orientation

On axis: <0001> ± 0.5° for 6H-N /4H-N /4H-SI /6H-SI

Off axis: 4.0° toward <11-20> ±0.5° for 4H-N /4H-SI

Micropipe Density (MPD)

≤5 cm-2

≤15 cm-2

≤30 cm-2

Electrical Resistivity

4H-N

0.015~0.028 Ω·cm

6H-N

0.02~0.1 Ω·cm

4/6H-SI

>1E5 Ω·cm

(90%) >1E5 Ω·cm

Primary Flat

{10-10} ± 5.0°

Primary Flat Length

22.2 mm ± 3.2 mm

Secondary Flat Length

11.2 mm ± 1.5 mm

Secondary Flat Orientation

Silicon face up: 90° CW from Prime flat ± 5.0°

Edge exclusion

2 mm

TTV /Bow /Warp

≤15μm /≤25μm /≤25μm

Surface Roughness

Polish   Ra ≤1 nm

CMP    Ra ≤0.5 nm

Cracks by high intensity light

None

1 allowed, ≤1 mm

1 allowed, ≤2 mm

Hex Plates by high intensity light*

Cumulative area ≤1 %

Cumulative area ≤1 %

Cumulative area ≤3 %

Polytype Areas by high intensity light*

None

Cumulative area ≤2 %

Cumulative area ≤5%

Scratches by high intensity light**

3 scratches to 1 x wafer diameter

cumulative length

5 scratches to 1 x wafer diameter

cumulative length

8 scratches to 1 x wafer diameter

cumulative length

Edge chip

None

3 allowed, ≤0.5 mm each

5 allowed, ≤1 mm each

Contamination by high intensity light

None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present. 

** The scratches are checked on the Si face only.

 PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 ×10-6

4-5 ×10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm·K @298K)

(N-type, 0.02 ohm·cm)

a~4.2

c~3.7

  

Thermal Conductivity (W/cm·K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5×106

3-5×106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2”, 3”, 4”, 6”; small substrates: 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 mm, other sizes are available and can be custom-made upon request

Product Grades

B Grade – Production grade (MPD ≤ 5 cm-2)

C Grade – Research grade (MPD ≤ 15 cm-2)

D Grade – Dummy grade (MPD ≤ 30 cm-2)

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter.  Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications.  CONTACT US today to get your quote. 

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications.


We Also Recommend