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2" Semi-insulating, Fe-doped, GaN 20 um, Gallium Nitride (GaN) Templates on Sapphire (0001)

  • 56900
  • Save $ 7500


  • Conductivity type: semi-insulating 
  • Doping type: Fe compensated
  • Dimension: Φ50.8 mm ± 0.1 mm
  • GaN Thickness:  20~30 μm
  • Usable area: >90%
  • Orientation: C plane (0001) ± 0.5°
  • Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
  • Secondary Orientation flat: (11-20) ± 3°, 8.0  ± 1.0 mm
  • Total Thickness Variation: <15 μm
  • Resistivity (300K): >1x106 Ω·cm
  • Dislocation Density: < 1x10^8 cm^-2 
  • Substrate Structure: GaN/Sapphire (0001)
  • Polishing: single side polished (SSP) to Ra < 0.5 nm with CMP, double size polish is available per request. Some mini hexagonal crystals may be present on the surface. 
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 

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