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2", N-type, Si-doped, GaN 3~5 um, Gallium Nitride (GaN) Templates on Sapphire (0001), Double Side Polish

  • 26900


  • Conductivity type: N-Type ( Si-doped)
  • Polish: Double Sided, for Single sided please click here
  • Dimension: Φ50.8 mm ± 0.1 mm
  • Thickness: 3~5 μm, 
  • Usable area: >90%
  • Orientation: C plane (0001) ± 0.5°
  • Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
  • Secondary Orientation flat: (11-20) ± 3°, 8.0 ± 1.0 mm
  • Total Thickness Variation: <15 μm
  • Resistivity (300K): < 0.05 Ω·cm
  • Dislocation Density: < 5x10^8 cm^-2 
  • Carrier concentration: > 1x10^18/cm^-3
  • Surface AFM RMS: < 0.5 nm
  • Substrate Structure: GaN/Sapphire (0001)
  • Polishing: single side polished (SSP), double side polish is available per request.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 

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