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2 inch Si-Doped N-Type GaN 20 um Gallium Nitride Template on Sapphire (0001),  MSE Supplies LLC

2 inch Si-Doped N-Type GaN 20 um Gallium Nitride Template on Sapphire (0001)

  • $ 32900

Qty (pieces) Price (per piece)
1 - 1 $ 329.00
2 - 10 $ 309.00
11 - 11+ $ 299.00

 

2 inch, Si-doped N type, 20 um, Gallium Nitride (GaN) Template on Sapphire (0001), Single Side Polish

  • Conductivity type: N-Type ( Si-doped)
  • Dimension: 50.8 mm +/- 0.1 mm (2 inch diameter)
  • GaN Thickness: 20 +/- 2 um
  • Usable area: >90%
  • Orientation: C plane (0001) +/- 0.5 deg
  • Orientation Flat: (1-100) +/- 0.5 deg, 16.0 +/- 1.0 mm
  • Secondary Orientation flat: (11-20) +/- 3 deg, 8.0 +/- 1.0 mm
  • Total Thickness Variation: <15 um
  • Resistivity (300K): < 0.05  Ohm-cm
  • Dislocation Density: < 5x108 cm-2
  • Carrier concentration: > 1x1018/cm-3
  • Surface roughness Ra: < 0.5 nm epi-ready
  • Substrate Structure: GaN/Sapphire (0001)
  • Polishing: single side polished (SSP), double side polish is available per request.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.
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    Related References:

    1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers

    https://doi.org/10.1143/JJAP.31.2883

    2. Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy

    https://doi.org/10.1063/1.371377

    3. The role of dislocation scattering in n-type GaN films

    https://doi.org/10.1063/1.122012