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2 inch Si-Doped N-Type GaN 20 um Gallium Nitride Template on Sapphire (0001)

  • $ 32900

Qty (pieces) Price (per piece)
1 - 1 $ 329.00
2 - 10 $ 309.00
11 - 11+ $ 299.00

 

2 inch, Si-doped N type, 20 um, Gallium Nitride (GaN) Template on Sapphire (0001), Single Side Polish

  • SKU#: WA0205
  • Conductivity type: N-Type ( Si-doped)
  • Dimension: 50.8 mm +/- 0.1 mm (2 inch diameter)
  • GaN Thickness: 20 +/- 2 um
  • Usable Area: >90%
  • Orientation: C plane (0001) +/- 0.5 deg
  • Orientation Flat: (1-100) +/- 0.5 deg, 16.0 +/- 1.0 mm
  • Total Thickness Variation of Sapphire Substrate: <15 um
  • Resistivity (300K): < 0.05  Ω·cm
  • Mobility: ~ 200 cm2/V·s
  • Dislocation Density: < 5x108 cm-2
  • Carrier Concentration: > 1x1018 cm-3
  • Surface Roughness Ra: < 0.5 nm, epi-ready
  • Sapphire substrate thickness: 430 +/- 25 um
  • Orientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1
  • Orientation Flat of sapphire: (11-20) 0 ± 0.2 deg, length 16.0 +/- 1.0 mm
  • Substrate Structure: GaN on Sapphire (0001)
  • Polishing: single side polished (SSP) is standard, double side polish (DSP) is available per request at additional cost.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers.
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    Related References:

    1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers

    2. Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy

    3. The role of dislocation scattering in n-type GaN films

    ABSTRACT