2 inch, Si-doped N type, 20 um, Gallium Nitride (GaN) Template on Sapphire (0001), Single Side Polish
Conductivity type: N-Type ( Si-doped)
Dimension: Φ50.8 mm ± 0.1 mm (2 inch diameter)
GaN Thickness: 20 ± 2 μm
Usable area: >90%
Orientation: C plane (0001) ± 0.5°
Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation flat: (11-20) ± 3°, 8.0 ± 1.0 mm
Total Thickness Variation: <15 μm
Resistivity (300K): < 0.05 Ω·cm
Dislocation Density: < 5x108 cm-2
Carrier concentration: > 1x1018/cm-3
Surface AFM RMS: < 0.5 nm as grown
Substrate Structure: GaN/Sapphire (0001)
Polishing: single side polished (SSP), double side polish is available per request.
Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.
1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
2. Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
3. The role of dislocation scattering in n-type GaN films
The lateral transport
films produced by electron cyclotron resonance
plasma-assisted molecular beam epitaxy
type with Si to the levels of
was investigated. The room temperature electron mobility
versus carrier concentration
was found to follow a family of bell-shaped curves consistent with a recently proposed model of scattering
by charged dislocations. The mechanism of this scattering
was investigated by studying the temperature dependence of the carrier concentration
and electron mobility.
It was found that in the low carrier concentration
the electron mobility
is thermally activated with an activation energy half of that of carrier concentration.
This is in agreement with the prediction of the dislocation model.