2 inch, Si-doped N type, 20 um, Gallium Nitride (GaN) Template on Sapphire (0001), Single Side Polish
Conductivity type: N-Type ( Si-doped)
Dimension: 50.8 mm +/- 0.1 mm (2 inch diameter)
GaN Thickness: 20 +/- 2 um
Usable Area: >90%
Orientation: C plane (0001) +/- 0.5 deg
Orientation Flat: (1-100) +/- 0.5 deg, 16.0 +/- 1.0 mm
Total Thickness Variation of Sapphire Substrate: <15 um
Resistivity (300K): < 0.05 Ω·cm
Mobility: ~ 200 cm2/V·s
Dislocation Density: < 5x108 cm-2
Carrier Concentration: > 1x1018 cm-3
Surface Roughness Ra: < 0.5 nm, epi-ready
Sapphire substrate thickness: 430 +/- 25 um
Orientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1
Orientation Flat of sapphire: (11-20) 0 ± 0.2 deg, length 16.0 +/- 1.0 mm
Substrate Structure: GaN on Sapphire (0001)
Polishing: single side polished (SSP) is standard, double side polish (DSP) is available per request at additional cost.
Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers.
1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
2. Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
3. The role of dislocation scattering in n-type GaN films
The lateral transport in GaN films produced by electron cyclotron resonance plasma-assisted molecular beam epitaxy doped n type with Si to the levels of 10^15 – 10^20 cm−3 was investigated. The room temperature electron mobility versus carrier concentration was found to follow a family of bell-shaped curves consistent with a recently proposed model of scattering by charged dislocations. The mechanism of this scattering was investigated by studying the temperature dependence of the carrier concentration and electron mobility. It was found that in the low carrier concentration region (<10^17 cm−3), the electron mobility is thermally activated with an activation energy half of that of carrier concentration. This is in agreement with the prediction of the dislocation model.