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2 in Si-Doped N-Type GaN 20 um Gallium Nitride Template on Sapphire (0001)

  • $ 32900


 

 2 inch, Si-doped N type, 20 um, Gallium Nitride (GaN) Template on Sapphire (0001), Single Side Polish

  • Conductivity type: N-Type ( Si-doped)
  • Dimension: Φ50.8 mm ± 0.1 mm (2 inch diameter)
  • GaN Thickness: 20 ± 2 μm
  • Usable area: >90%
  • Orientation: C plane (0001) ± 0.5°
  • Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
  • Secondary Orientation flat: (11-20) ± 3°, 8.0 ± 1.0 mm
  • Total Thickness Variation: <15 μm
  • Resistivity (300K): < 0.05 Ω·cm
  • Dislocation Density: < 5x108 cm-2 
  • Carrier concentration: > 1x1018/cm-3
  • Surface AFM RMS: < 0.5 nm as grown
  • Substrate Structure: GaN/Sapphire (0001)
  • Polishing: single side polished (SSP), double side polish is available per request.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 
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    Related References: 

    1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers

    https://doi.org/10.1143/JJAP.31.2883

    2. Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy

    https://doi.org/10.1063/1.371377

    3. The role of dislocation scattering in n-type GaN films

    https://doi.org/10.1063/1.122012

     

    The lateral transport in GaN films produced by electron cyclotron resonanceplasma-assisted molecular beam epitaxy doped n type with Si to the levels of was investigated. The room temperature electron mobilityversus carrier concentration was found to follow a family of bell-shaped curves consistent with a recently proposed model of scattering by charged dislocations. The mechanism of this scattering was investigated by studying the temperature dependence of the carrier concentration and electron mobility. It was found that in the low carrier concentration region  the electron mobility is thermally activated with an activation energy half of that of carrier concentration. This is in agreement with the prediction of the dislocation model.

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